IPDD60R150G7XTMA1

IPDD60R150G7XTMA1 is a C7 GOLD series(G7) 600V CoolMOS™ G7SJ power device MOSFET. This for the first time brings together the benefits of the C7 GOLD CoolMOS™ technology, 4pin Kelvin Source capability and the improved thermal properties of to enable a possible SMD solution for high current topologies such as PFC up to 3kW. This reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing. Potential applications include PFC stages and PWM stages (TTF, LLC) for high power/ performance, SMPS e.g. computing, server, telecom, UPS and solar.

• C7 gold FOM RDS(on)*Qg is 15% better to C7 600V enabling faster switching leading to high efficiency
• Possibility to increase economies of scale by usage in PFC and PWM topologies in the application
• Improved thermals enable SMDDDPAK package to use in higher current designs than previously possible
• 600V minimum drain-source breakdown voltage (VGS=0V, ID=1mA, Tj=25°C)
• 3 to 4V gate threshold voltage range (VDS=VGS, ID=0.26mA, Tj=25°C)
• 100nA maximum gate-source leakage current (VGS=20V, VDS=0V, Tj=25°C)
• 0.8ohm typical gate resistance (f=1MHz, open drain, Tj=25°C)
• 17ns typical turn-on delay time (VDD=400V, VGS=13V, ID=5.3A, RG=10 ohm)
• PG-HDSOP-10 package, operating junction temperature range from -55 to 150°C