IRF8301MTRPBF

IRF8301MTRPBF is a 30V single N-channel StrongIRFET™ power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve very low on-state resistance in a package. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.

• Ultra-low RDS(on), low profile (<lt/>0.7mm)
• Dual sided cooling compatible, ultra-low package inductance
• Optimized for high speed switching or high current switch (power tool)
• Low conduction and switching losses
• Compatible with existing surface mount techniques
• Drain-to-source breakdown voltage is 30V (min, VGS = 0V, ID = 250µA)
• Gate threshold voltage range from 1.35 to 2.35V (VDS = VGS, ID = 150µA)
• Gate-to-drain charge is 16nC (typ, ID = 25A)
• Turn-on delay time is 20ns (typ, VDD = 15V, VGS = 4.5V)
• DirectFET package, operating junction and storage temperature range from -40 to +70°C

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