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1,075 有货
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1075 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY7.600 (CNY8.588) |
10+ | CNY4.950 (CNY5.5935) |
50+ | CNY4.670 (CNY5.2771) |
100+ | CNY4.370 (CNY4.9381) |
250+ | CNY4.100 (CNY4.633) |
500+ | CNY3.920 (CNY4.4296) |
1000+ | CNY3.840 (CNY4.3392) |
2500+ | CNY3.750 (CNY4.2375) |
包装规格:单件(切割供应)
最低: 1
多件: 1
CNY7.60 (CNY8.59 含税)
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产品概述
IRS2108STRPBF is a IRS2108 half bridge driver. It is a high voltage, high speed power MOSFET and IGBT driver with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Fully operational to +600V, tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10V to 20V
- Undervoltage lockout for both channels
- Cross-conduction prevention logic, matched propagation delay for both channels
- High-side output in phase with HIN input, low-side output out of phase with active-low LIN input
- Logic and power ground +/- 5V offset
- Lower di/dt gate driver for better noise immunity
- 8-lead SOIC package
技术规格
通道数
2放大器
驱动配置
半桥
针脚数
8引脚
芯片安装
表面安装
拉电流
290mA
电源电压最小值
10V
工作温度最小值
-40°C
输入延迟
220ns
合规
-
栅极驱动器类型
-
电源开关类型
MOSFET
IC 外壳 / 封装
SOIC
输入类型
反相, 非反相
灌电流
600mA
电源电压最大值
20V
工作温度最高值
125°C
输出延迟
200ns
产品范围
-
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
税则号:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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重量(千克):.000833