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数量 | 价钱 (含税) |
---|---|
1+ | CNY93.220 (CNY105.3386) |
10+ | CNY82.100 (CNY92.773) |
25+ | CNY68.750 (CNY77.6875) |
50+ | CNY62.080 (CNY70.1504) |
100+ | CNY57.620 (CNY65.1106) |
250+ | CNY55.380 (CNY62.5794) |
产品信息
产品概述
S25FL256SAGNFB000 is a SPI multi-I/O, 3.0V, 256Mb (32MB) FL-S flash memory. It is a flash non-volatile memory using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65-nm process lithography. It connects to host system via SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple-width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. It offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. This is ideal for code shadowing, XIP, and data storage.
- CMOS 3.0V core with versatile I/O
- Cycling endurance, 100,000 program-erase cycles, minimum
- 20 year data retention, minimum
- OTP array of 1024 bytes, block protection
- Status register bits to control protection against program or erase of a contiguous range of sectors
- Advanced sector protection (ASP), individual sector protection controlled by boot code or password
- 65-nm MIRRORBIT™ technology with Eclipse architecture
- Core supply voltage: 2.7V to 3.6V
- 8-contact WSON package
- Temperature range : automotive AEC-Q100 grade 2 (-40°C to +105°C)
技术规格
串行NOR
32M x 8位
WSON-EP
133MHz
2.7V
3V
-40°C
3V Serial NOR Flash Memories
No SVHC (21-Jan-2025)
256Mbit
CFI、SPI
8引脚
-
3.6V
表面安装
105°C
MSL 3 - 168小时
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书