S29GL01GS10FHI010

S29GL01GS10FHI010 is a S29GL01GS MIRRORBIT™ page-mode flash memory IC is fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

• CMOS 3.0V core with versatile I/O, single supply (VCC) for read/program/erase (2.7V to 3.6V)
• Versatile I/O feature, wide I/O voltage range (VIO): 1.65V to VCC
• ×16 data bus, asynchronous 32-byte page read, 512-byte programming buffer
• Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
• Sector erase-uniform 128kbyte sectors, advanced sector protection (ASP), 20 years data retention
• Status register, data polling, and ready/busy pin methods to determine device status
• Suspend and resume commands for program and erase operations, 100000 program/erase cycles
• Separate 1024-byte one time program (OTP) array with two lockable regions
• Fortified ball-grid array package (LAA064), industrial –40 to 85°C temperature
• VIO = VCC = 2.7 V to 3.6 V, highest address sector protected, 100ns random access time