S29GL064S70FHI010

S29GL064S70FHI010 is a S29GL064S MIRRORBIT™ 64Mb page-mode flash memory IC can be programmed either in the host system or in standard EPROM programmers. It requires only a single 3.0V power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature is supported through increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate system production. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

• CMOS 3.0V core with versatile I/O, single power supply operation, secure silicon region
• Programmed and locked at the factory or by the customer, flexible sector architecture
• Automatic error checking and correction ECC-internal hardware ECC with single bit error correction
• 100000 erase cycles per sector minimum, 20-year data retention typical
• High performance, 70ns access time, 8-word/16-byte page read buffer, 15ns page read time
• 25mA typical initial read current at 5MHz, 40µA typical standby mode current
• Manufactured on 65nm MIRRORBIT™ process technology, hardware reset input (RESET#) resets device
• Ready/busy# output (RY/BY#) detects program or erase cycle completion
• 70ns speed, fortified ball-grid array package (LAA064), industrial –40 to 85°C temperature
• ×8/×16, VCC = VIO = 2.7V–3.6V, uniform sector, WP#/ACC = VIL protects highest addressed sector