S29GL256S90FHI010

S29GL256S90FHI010 is a S29GL256 MIRRORBIT™ Eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.

• 90ns random access time speed option, industrial temperature range from -40°C to 85°C
• Fortified ball-grid array (LAA064) 13 x 11mm package type
• VIO = VCC is 2.7V to 3.6V, highest address sector protected
• ×16 data bus, asynchronous 32byte page read
• 512byte programming buffer, programming in page multiples, up to a maximum of 512bytes
• Single word and multiple program on same word options
• Automatic error checking and correction internal hardware ECC with single bit error correction
• Separate 1024byte one time program (OTP) array with two lockable regions
• Volatile and non-volatile protection methods for each sector
• 100000 program / erase cycles, 20 years data retention