S29GL512S10FHI010

S29GL512S10FHI010 is a S29GL512 MIRRORBIT™ eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

• 100ns random access time speed option, industrial temperature range from -40 to +85°C
• Fortified ball-grid array package (LAA064) 13 x 11mm package type
• VIO = VCC = 2.7V to 3.6V, highest address sector protected
• CMOS 3.0V core with versatile I/O, versatile I/O feature, wide I/O voltage range 1.65V to VCC
• ×16 data bus, asynchronous 32byte page read
• Programming in page multiples, up to a maximum of 512bytes
• Automatic error checking and correction internal hardware ECC with single bit error correction
• Sector erase, uniform 128kbyte sectors
• Suspend and resume commands for program and erase operations
• 100000 program / erase cycles, 20 years data retention