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数量 | 价钱 (含税) |
---|---|
5+ | CNY6.660 (CNY7.5258) |
50+ | CNY4.490 (CNY5.0737) |
250+ | CNY3.520 (CNY3.9776) |
1000+ | CNY3.220 (CNY3.6386) |
2000+ | CNY3.130 (CNY3.5369) |
产品信息
产品概述
The IRF7389TRPBF is a HEXFET power MOSFET in 8 pin SOIC package. This dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Complimentary half bridge
- Fully avalanche rated
- 30V P channel and -30V N channel drain to source voltage
- 7.3A P channel and -5.3A N channel continues drain current
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
技术规格
互补N与P沟道
30V
7.3A
0.023ohm
8引脚
2.5W
-
MSL 1 -无限制
30V
7.3A
0.023ohm
SOIC
2.5W
150°C
-
No SVHC (21-Jan-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书