打印页面
IRFB4229PBF
功率场效应管, MOSFET, N通道, 250 V, 46 A, 0.046 ohm, TO-220AB, 通孔
512 有货
需要更多？
512 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY25.630 (CNY28.9619) |
| 10+ | CNY12.630 (CNY14.2719) |
| 100+ | CNY11.660 (CNY13.1758) |
| 500+ | CNY9.500 (CNY10.735) |
| 1000+ | CNY9.200 (CNY10.396) |
包装规格：每个
最低: 1
多件: 1
CNY25.63 (CNY28.96 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
- Advanced process technology
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
46A
晶体管封装类型
TO-220AB
Rds(on)测试电压
10V
功率耗散
330W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
漏源电压, Vds
250V
漏源接通状态电阻
0.046ohm
晶体管安装
通孔
阈值栅源电压最大值
5V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
相关产品
找到 4 件产品
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下载产品合规证书
产品合规证书
重量（千克）：.002797