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IXTH96N20P
功率场效应管, MOSFET, 极性FET, N沟道, 200 V, 96 A, 0.024 ohm, TO-247, 通孔
产品概述
The IXTH96N20P is a PolarHT™ single N-channel enhancement-mode Power MOSFET offers reduced static drain-to-source ON-resistance and high power density.
- International standard packages
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
- Avalanche rating
应用
电源管理
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
产品信息
技术文档 (1)
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CAD Models - Notice
CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.
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交付周期内有额外库存， 交付周期大约为 22-8-15
15 UK 有库存，可在 4-5 个工作日内交货
| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 1+ | CNY69.10 (CNY78.08) | ( ) |
| 10+ | CNY62.44 (CNY70.56) | ( ) |
| 100+ | CNY51.69 (CNY58.41) | ( ) |
| 500+ | CNY45.01 (CNY50.86) | ( ) |
| 1000+ | CNY39.61 (CNY44.76) | ( ) |
定价不可用。 请联系客户服务。
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