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CBR02C100J3GAC
射频电容, C0G / NP0, 10 pF, 25 V, HiQ-CBR, ± 5%, 125 °C, 0201 [0603公制]
- 制造商：
- KEMET KEMET
- 制造商产品编号:
- CBR02C100J3GAC
- 库存编号
- 1972998
- 产品范围
- HiQ-CBR
- 技术数据表:
- CBR02C100J3GAC Datasheet
产品范围选择器 (HiQ-CBR)
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技术文档 (5)
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CAD Models - Notice
CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.
产品概述
CBR系列SMD多层陶瓷电容器采用C0G介质, 具有高稳定性贱金属电极介电系统. 该电容器具有极低的ESR, 高自谐振特性, 非常适合谐振电路应用, 或需要高稳定性Q和电容特性的应用. 该系列的电容值相对于时间和电压变化非常小, 相对于环境温度, 变化可忽略不计.
- 超高Q
- 高SRF
- 良好的温度稳定性
- 1MHz至50GHz频率范围
- 贱金属电极 (BME) 介质系统
- 可选0201, 0402, 0603, 0805外壳尺寸
- 6.3至500V电压范围
- 0.1至100pF电容范围
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
包装类型
切割卷带
可延期交货
| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 50+ | CNY0.783 (CNY0.88) | ( ) |
| 100+ | CNY0.666 (CNY0.75) | ( ) |
| 500+ | CNY0.47 (CNY0.53) | ( ) |
| 1000+ | CNY0.411 (CNY0.46) | ( ) |
| 2500+ | CNY0.392 (CNY0.44) | ( ) |
| 5000+ | CNY0.363 (CNY0.41) | ( ) |
定价不可用。 请联系客户服务。
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