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数量 | 价钱 (含税) |
---|---|
1+ | CNY28.120 (CNY31.7756) |
10+ | CNY26.210 (CNY29.6173) |
25+ | CNY25.440 (CNY28.7472) |
50+ | CNY24.850 (CNY28.0805) |
100+ | CNY24.260 (CNY27.4138) |
250+ | CNY23.480 (CNY26.5324) |
500+ | CNY22.390 (CNY25.3007) |
1000+ | CNY21.740 (CNY24.5662) |
产品概述
MT29F2G16ABAEAWP-AIT:E is a NAND flash device which includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN).
- 2Gb density, 16-bit device width
- 3.3V (2.7 to 3.6V) operating voltage
- Feature set E, Async interface
- Single-level cell (SLC) technology, command set: ONFI NAND flash protocol
- Operation completion, pass/fail condition, write-protect status
- Program page cache mode, read page cache mode, one-time programmable (OTP) mode
- Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion
- WP# signal: write protect entire device
- Automotive industrial temperature from -40°C to +85°C
- Package style is 48-pin TSOP
技术规格
SLC NAND
128M x 16位
TSOP-I
50MHz
2.7V
3.3V
-40°C
2.7V-3.6V SLC NAND Flash Memories
2Gbit
并行口
48引脚
16ns
3.6V
表面安装
85°C
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Singapore
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书