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MT29F4G08ABAFAWP-AAT:F
闪存, SLC NAND, 4 Gbit, 512M x 8位, 并行口, TSOP, 48 引脚
398 有货
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398 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY41.590 (CNY46.9967) |
| 10+ | CNY33.990 (CNY38.4087) |
| 25+ | CNY33.660 (CNY38.0358) |
| 50+ | CNY33.330 (CNY37.6629) |
| 100+ | CNY32.990 (CNY37.2787) |
| 250+ | CNY32.540 (CNY36.7702) |
包装规格：每个
最低: 1
多件: 1
CNY41.59 (CNY47.00 含税)
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产品概述
MT29F4G08ABAFAWP-AAT:F is a NAND flash memory. This NAND flash device includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash dies. A NAND flash die is the minimum unit that can independently execute commands and report status.
- Open NAND flash interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Command set: ONFI NAND flash protocol
- Operation status method for detecting: operation completion
- Pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- RESET (FFh) required after power-on
- Internal data move operations supported within the plane from which data is read
- 4Gb density, 8-bit device width, 3.3V (2.7 to 3.6V) operating voltage range
- 48-pin TSOP type 1 package, automotive temperature range from -40°C to +105°C
技术规格
闪存类型
SLC NAND
记忆配置
512M x 8位
IC 外壳 / 封装
TSOP
时钟频率最大值
50MHz
电源电压最小值
-
额定电源电压
3.3V
工作温度最小值
-40°C
产品范围
3.3V Parallel NAND Flash Memories
SVHC(高度关注物质)
No SVHC (17-Dec-2015)
存储密度
4Gbit
接口
并行口
针脚数
48引脚
存取时间
-
电源电压最大值
-
芯片安装
表面安装
工作温度最高值
105°C
湿气敏感性等级
MSL 3 - 168小时
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Singapore
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Singapore
进行最后一道重要生产流程所在的地区
税则号：85423290
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (17-Dec-2015)
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产品合规证书
重量（千克）：.000001