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769 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY43.660 (CNY49.3358) |
10+ | CNY40.830 (CNY46.1379) |
包装规格:每个
最低: 1
多件: 1
CNY43.66 (CNY49.34 含税)
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产品概述
MT29F8G08ABBCA is a NAND flash memory. NAND flash device include an asynchronous data interface for high-performance I/O operations. This device use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.
- Single-level cell (SLC) technology, asynchronous I/O performance
- Array performance, program page is 200µs (typical)
- Command set is ONFI NAND flash protocol, advanced command set
- Program page cache mode, read page cache mode, one-time programmable (OTP) mode
- Operation status byte provides software method for detecting, operation completion
- Pass/fail condition, write-protect status, quality and reliability
- RESET (FFh) required as first command after power-on
- 8Gb density, 8bit device width, SLC level
- 1.8V (1.7–1.95V) operating voltage, asynchronous interface
- 63-ball VFBGA (9 x 11 x 1.0mm) package, industrial operating temperature range from –40°C to +85°C
技术规格
闪存类型
SLC NAND
记忆配置
1G x 8位
IC 外壳 / 封装
VFBGA
时钟频率最大值
50MHz
电源电压最小值
1.7V
额定电源电压
1.8V
工作温度最小值
-40°C
产品范围
1.8V Parallel NAND Flash Memories
存储密度
8Gbit
接口
并行口
针脚数
63引脚
存取时间
22ns
电源电压最大值
1.95V
芯片安装
表面安装
工作温度最高值
85°C
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423290
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.000001