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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY92.900 (CNY104.977) |
| 10+ | CNY86.260 (CNY97.4738) |
| 25+ | CNY83.570 (CNY94.4341) |
| 50+ | CNY81.560 (CNY92.1628) |
| 100+ | CNY79.620 (CNY89.9706) |
| 250+ | CNY77.010 (CNY87.0213) |
产品概述
MT29F8G08ADADAH4-IT:D is a NAND flash device which includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN).
- 8Gb density, 8-bit device width
- SLC level, 3.3V (2.7V to 3.6V) operating voltage
- Feature set D, Async interface
- Single-level cell (SLC) technology, command set: ONFI NAND flash protocol
- Program page cache mode, read page cache mode, one-time programmable (OTP) mode
- Operation completion, pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- WP# signal: write protect entire device
- Industrial operating temperature range from -40°C to +85°C, package style is 63-ball VFBGA
技术规格
SLC NAND
1G x 8位
VFBGA
50MHz
2.7V
3.3V
-40°C
2.7V-3.6V SLC NAND Flash Memories
8Gbit
并行口
63引脚
16ns
3.6V
表面安装
85°C
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Singapore
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书