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31 有货
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31 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY46.710 (CNY52.7823) |
10+ | CNY44.050 (CNY49.7765) |
25+ | CNY42.690 (CNY48.2397) |
50+ | CNY41.680 (CNY47.0984) |
100+ | CNY40.680 (CNY45.9684) |
250+ | CNY39.390 (CNY44.5107) |
500+ | CNY38.380 (CNY43.3694) |
包装规格:每个
最低: 1
多件: 1
CNY46.71 (CNY52.78 含税)
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产品信息
制造商MICRON
制造商产品编号MT41K128M16JT-125 AUT:K
库存编号4050839
技术数据表
DRAM类型DDR3L
存储密度2Gbit
记忆配置128M x 16位
时钟频率最大值800MHz
IC 外壳 / 封装FBGA
针脚数96引脚
额定电源电压1.35V
芯片安装表面安装
工作温度最小值-40°C
工作温度最高值125°C
产品范围-
产品概述
MT41K128M16JT-125 AUT:K is a DDR3L SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR3 SDRAM consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one half-clock-cycle data transfers at the I/O pins.
- 128Meg x 16 configuration, data rate is 1600MT/s, automotive certification
- Packaging style is 96-ball 8mm x 14mm FBGA
- Timing (cycle time) is 1.25ns at CL = 11 (DDR3-1600)
- Ultra-high temperature range is –40°C to +125°C
- Operating supply voltage is 1.283V to 1.45V
- Differential bidirectional data strobe, 8n-bit prefetch architecture
- Programmable CAS (READ) latency (CL), programmable posted CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL), self refresh mode
- Self refresh temperature (SRT), automatic self refresh (ASR)
- Write levelling, multipurpose register, output driver calibration
技术规格
DRAM类型
DDR3L
记忆配置
128M x 16位
IC 外壳 / 封装
FBGA
额定电源电压
1.35V
工作温度最小值
-40°C
产品范围
-
存储密度
2Gbit
时钟频率最大值
800MHz
针脚数
96引脚
芯片安装
表面安装
工作温度最高值
125°C
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
下载产品合规证书
产品合规证书
重量(千克):.000001