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36 有货
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36 件可于 5-6 个工作日内送达(英国 库存)
数量 | 价钱 (含税) |
---|---|
1+ | CNY63.640 (CNY71.9132) |
10+ | CNY60.340 (CNY68.1842) |
25+ | CNY58.610 (CNY66.2293) |
50+ | CNY57.760 (CNY65.2688) |
100+ | CNY54.600 (CNY61.698) |
250+ | CNY53.020 (CNY59.9126) |
包装规格:每个
最低: 1
多件: 1
CNY63.64 (CNY71.91 含税)
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产品信息
制造商MICRON
制造商产品编号MT41K256M16TW-107 AUT:P
库存编号4050841
技术数据表
DRAM类型DDR3L
存储密度4Gbit
记忆配置256M x 16位
时钟频率最大值933MHz
IC 外壳 / 封装TFBGA
针脚数96引脚
额定电源电压1.35V
芯片安装表面安装
工作温度最小值-40°C
工作温度最高值125°C
产品范围-
产品概述
MT41K256M16TW-107 AUT:P is a DDR3 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM consists of a single 8n-bit-wide, four-clock cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
- 256Meg x 16 configuration, data rate is 1866MT/s, automotive certification
- Packaging style is 96-ball 8mm x 14mm FBGA
- Timing (cycle time) is 1.07ns at CL = 13 (DDR3-1866)
- Ultra-high temperature range is –40°C to +125°C, multipurpose register
- Supply voltage range is 1.283V to 1.45V, output driver calibration
- Differential bidirectional data strobe, 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#), 8 internal banks
- Programmable CAS (READ) latency (CL), programmable CAS (WRITE) latency (CWL)
- Selectable BC4 or BL8 on-the-fly (OTF), self refresh mode
- Self refresh temperature (SRT), automatic self refresh (ASR)
技术规格
DRAM类型
DDR3L
记忆配置
256M x 16位
IC 外壳 / 封装
TFBGA
额定电源电压
1.35V
工作温度最小值
-40°C
产品范围
-
存储密度
4Gbit
时钟频率最大值
933MHz
针脚数
96引脚
芯片安装
表面安装
工作温度最高值
125°C
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
税则号:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.000001