MT53E256M32D1KS-046 WT:L

MT53E256M32D1KS-046 WT:L is a LPDDR4X/LPDDR4 SDRAM. The 8Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.

• Frequency range: 2133–10MHz (data rate range per pin: 4266–20Mb/s)
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL =16/32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
• Selectable output drive strength (DS), clock-stop capability, single-ended CK and DQS support
• 256 Meg x 32 (2 channels x 16 I/O) array configuration
• 200-ball VFBGA package, AEC-Q100 qualified
• Operating temperature range from -25°C to +85°C