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产品信息
制造商MICRON
制造商产品编号MT53E768M32D2ZW-046 AIT:C
库存编号4263253
技术数据表
DRAM类型Mobile LPDDR4
存储密度24Gbit
记忆配置768M x 32位
时钟频率最大值2.133GHz
IC 外壳 / 封装TFBGA
针脚数200引脚
额定电源电压1.1V
芯片安装表面安装
工作温度最小值-40°C
工作温度最高值95°C
产品范围-
产品概述
MT53E768M32D2ZW-046 AIT:C is a mobile LPDDR4 SDRAM. The 12Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability, AEC-Q100 automotive grade
- Programmable VSS (ODT) termination, single-ended CK and DQS support
- Operating voltage is 1.10V VDD2/0.60V VDDQ or 1.10V VDDQ, 468ps cycle time
- 3GB (24Gb) total density, 4266Mb/s data rate per pin
- Operating temperature range from -40°C to +95°C, 200-ball TFBGA package
技术规格
DRAM类型
Mobile LPDDR4
记忆配置
768M x 32位
IC 外壳 / 封装
TFBGA
额定电源电压
1.1V
工作温度最小值
-40°C
产品范围
-
存储密度
24Gbit
时钟频率最大值
2.133GHz
针脚数
200引脚
芯片安装
表面安装
工作温度最高值
95°C
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Singapore
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Singapore
进行最后一道重要生产流程所在的地区
税则号:85423290
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.000001