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数量 | 价钱 (含税) |
---|---|
1+ | CNY27.180 (CNY30.7134) |
10+ | CNY24.970 (CNY28.2161) |
25+ | CNY24.570 (CNY27.7641) |
50+ | CNY24.150 (CNY27.2895) |
100+ | CNY23.730 (CNY26.8149) |
250+ | CNY23.140 (CNY26.1482) |
500+ | CNY17.770 (CNY20.0801) |
1000+ | CNY12.400 (CNY14.012) |
产品信息
产品概述
MP1923 is a high-frequency, N-channel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are controlled independently, and are matched with <lt/>5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET under-voltage lockout (UVLO) protection forces the outputs low. The MP1923 also features an integrated bootstrap (BST) diode to reduce the external component count. Applications include motor drivers, telecom half-bridge power supplies, avionics DC/DC converters, two-switch forward converters and active-clamp forward converters.
- Drives an N-channel MOSFET half-bridge
- Low dropout with 4.5V undervoltage lockout (UVLO) falling threshold
- 120V bootstrap voltage (VBST) range
- On-chip bootstrap diode, 20ns typical propagation delay
- 8A sink current, 7A source current at 12V VDD
- <lt/>5ns gate driver matching time delay
- Drives a 1nF load with 7.2ns rise time (tRISE) and 5.5ns fall time (tFALL) at 12V VDD
- TTL-compatible input, <lt/>300µA quiescent current (IQ)
- UVLO protection for the HS-FET and LS-FET gate drivers
- Available in QFN-8 package
注释
MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.
技术规格
5V
8A
100V
8引脚
-
No SVHC (19-Jan-2021)
17V
-1V
QFN-EP
-
MP1923
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书