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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY29.150 (CNY32.9395) |
| 10+ | CNY22.070 (CNY24.9391) |
| 25+ | CNY20.330 (CNY22.9729) |
| 50+ | CNY19.370 (CNY21.8881) |
| 100+ | CNY18.390 (CNY20.7807) |
| 250+ | CNY17.450 (CNY19.7185) |
| 500+ | CNY16.790 (CNY18.9727) |
| 1000+ | CNY16.150 (CNY18.2495) |
产品概述
MPQ1923 is an AEC-Q100 qualified, 100V, 8A, high-frequency, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are controlled independently, and are matched with <lt/>5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET undervoltage lockout (UVLO) protection forces the outputs low. The MPQ1923 also features an integrated bootstrap (BST) diode to reduce the external component count. Applications include motor drivers, telecom half-bridge power supplies, avionics DC/DC converters, two-switch forward converters and active-clamp forward converters.
- Drives an N-channel MOSFET half-bridge
- Low dropout with 4.5V undervoltage lockout (UVLO) falling threshold
- 120V bootstrap voltage (VBST) range, on-chip bootstrap diode
- 20ns typical propagation delay, 8A sink current, 7A source current at 12V VDD
- <lt/>5ns gate driver matching time delay
- Drives a 1nF load with 7.2ns rise time (tRISE) and 5.5ns fall time (tFALL) at 12V VDD
- TTL-compatible input, <lt/>300µA quiescent current (IQ)
- UVLO protection for the HS-FET and LS-FET gate drivers
- Available in QFN-8 package
注释
MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.
技术规格
5V
8A
100V
8引脚
-
No SVHC (19-Jan-2021)
17V
-1V
QFN-EP
-
MPQ1923
技术文档 (1)
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RoHS
RoHS
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