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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY25.440 (CNY28.7472) |
| 10+ | CNY22.270 (CNY25.1651) |
| 25+ | CNY18.450 (CNY20.8485) |
| 50+ | CNY16.540 (CNY18.6902) |
| 100+ | CNY15.270 (CNY17.2551) |
| 250+ | CNY14.250 (CNY16.1025) |
| 500+ | CNY13.490 (CNY15.2437) |
| 1000+ | CNY11.810 (CNY13.3453) |
产品概述
MPQ1925 is a high-frequency, N-channel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are independently controlled, and are matched with less than 5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET under-voltage lockout (UVLO) protection forces the outputs low. The MPQ1925 also features an integrated bootstrap (BST) diode to reduce the external component count. The MPQ1925 is available in a QFN-8 (4mmx4mm) package. Applications include motor drivers, telecommunication half-bridge power supplies, avionics DC/DC converters, two-switch forward converters, active-clamp forward converters.
- Drives an N-channel MOSFET half-bridge
- 115V bootstrap voltage (VBST) range, on-chip bootstrap (BST) diode
- Typical 20ns propagation delay, <lt/>5ns gate driver matching time
- Drives a 2.2nF load with a 15ns rise time and 10ns fall time at 12V VDD
- Transistor-to-transistor logic (TTL) compatible input
- <lt/>150µA quiescent current (IQ)
- High-side MOSFET (HS-FET) and low side MOSFET (LS-FET) undervoltage lockout (UVLO) protection
注释
MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.
技术规格
1放大器
半桥
8引脚
表面安装
4.7A
8V
-40°C
20ns
-
-
MOSFET
QFN-EP
TTL
6A
15V
150°C
20ns
-
技术文档 (1)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:China
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RoHS
RoHS
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