需要更多?
数量 | 价钱 (含税) |
---|---|
1+ | CNY49.590 (CNY56.0367) |
10+ | CNY35.330 (CNY39.9229) |
100+ | CNY30.700 (CNY34.691) |
500+ | CNY30.670 (CNY34.6571) |
1000+ | CNY30.630 (CNY34.6119) |
2000+ | CNY30.590 (CNY34.5667) |
3000+ | CNY30.550 (CNY34.5215) |
产品信息
产品概述
NCD57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn−off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCD57000 accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability.
- High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages
- Low Output Impedance for Enhanced IGBT Driving
- Short Propagation Delays with Accurate Matching
- Active Miller Clamp to Prevent Spurious Gate Turn−on
- DESAT Protection with Programmable Delay
- Negative Voltage (Down to −9 V) Capability for DESAT
- Soft Turn Off During IGBT Short Circuit
- IGBT Gate Clamping During Short Circuit
- IGBT Gate Active Pull Down
- Tight UVLO Thresholds for Bias Flexibility
- Wide Bias Voltage Range including Negative VEE2
- 3.3 V to 5 V Input Supply Voltage
- Designed for AEC−Q100 Certification
- 5000 V Galvanic Isolation (to meet UL1577 Requirements)
- 1200 V Working Voltage (per VDE0884−11 Requirements)
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
1放大器
高压侧和低压侧
16引脚
表面安装
7.8A
3.3V
-40°C
60ns
-
MSL 1 -无限制
隔离式
IGBT, MOSFET, SiC MOSFET
WSOIC
反相, 非反相
7.1A
5V
125°C
66ns
-
No SVHC (27-Jun-2024)
技术文档 (1)
相关产品
找到 1 件产品
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书