FDMC007N08LCDC

FDMC007N08LCDC is a Power Trench® shielded gate N‐channel MOSFET. This is produced using ON Semiconductor’s advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications include primary DC−DC MOSFET, synchronous rectifier in DC−DC and AC−DC, motor drive, solar.

• 5.1mohm typ static drain to source on resistance (VGS = 10V, ID = 22A, TJ = 25°C)
• 1.5V typical gate to source threshold voltage (VGS = VDS, ID = 130µA, TJ = 25°C)
• 80V typical drain to source breakdown voltage (ID = 250µA, VGS = 0V, TJ = 25°C)
• 5V drive capable, 50% lower Qrr than other MOSFET suppliers
• Lowers switching noise/EMI, 100% UIL tested
• 1µA maximum zero gate voltage drain current (VDS = 64V, VGS = 0V)
• 80S typical forward transconductance (VDS = 5V, ID = 22A)
• 0.5ohm typ gate resistance (TJ = 25°C), 11ns typ Turn-on delay time (VDD = 40V,ID = 22A,VGS = 10V)
• 24nC typical reverse recovery charge (IF = 11A, di/dt = 300A/µs)
• PQFN8 package, operating and storage junction temperature range from -55 to +150°C