HGT1S10N120BNST

The HGT1S10N120BNST is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.

• Short-circuit rating
• Avalanche rated
• 2.45V @ IC = 10A Low saturation voltage
• 140ns Fall time @ TJ = 150°C
• 298W Total power dissipation @ TC = 25°C

警告

该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.