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HUF75639G3
功率场效应管, MOSFET, N通道, 100 V, 56 A, 0.025 ohm, TO-247, 通孔
409 有货
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409 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY31.830 (CNY35.9679) |
| 10+ | CNY16.000 (CNY18.080) |
| 100+ | CNY13.940 (CNY15.7522) |
| 500+ | CNY12.950 (CNY14.6335) |
| 1000+ | CNY12.480 (CNY14.1024) |
包装规格：每个
最低: 1
多件: 1
CNY31.83 (CNY35.97 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The HUF75639G3 is a N-channel Power MOSFETs manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery operated products.
- Peak current vs. pulse width curve
- UIS Rating curve
- Temperature compensated PSPICE®/SABER™ electrical, SPICE & SABER thermal impedance simulation models
技术规格
通道类型
N通道
电流, Id 连续
56A
晶体管封装类型
TO-247
Rds(on)测试电压
10V
功率耗散
200W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (25-Jun-2025)
漏源电压, Vds
100V
漏源接通状态电阻
0.025ohm
晶体管安装
通孔
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (25-Jun-2025)
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产品合规证书
重量（千克）：.005