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TP70H300G4JSGB-TR
氮化镓 (GaN)晶体管, 700 V, 8 A, 0.312 ohm, 5.4 nC, QFN, 表面安装
4,978 有货
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4978 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY20.670 (CNY23.3571) |
| 10+ | CNY13.340 (CNY15.0742) |
| 100+ | CNY9.470 (CNY10.7011) |
| 500+ | CNY7.960 (CNY8.9948) |
| 1000+ | CNY7.170 (CNY8.1021) |
| 5000+ | CNY6.920 (CNY7.8196) |
包装规格：单件（切割供应）
最低: 1
多件: 1
CNY20.67 (CNY23.36 含税)
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产品信息
制造商RENESAS
制造商产品编号TP70H300G4JSGB-TR
库存编号4680957
产品范围SuperGaN Series
漏源电压, Vds700V
电流, Id 连续8A
漏源接通状态电阻0.312ohm
栅极电荷(典型值)5.4nC
晶体管封装类型QFN
晶体管安装表面安装
针脚数8引脚
产品范围SuperGaN Series
合规-
SVHC(高度关注物质)No SVHC (21-Jan-2025)
产品概述
TP70H300G4JSGB-TR is a 700V, 300mohm SuperGaN® Gallium Nitride (GaN) FET. It is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-the art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Applications include consumer, power adapters, low power SMPS and lighting.
- Dynamic RDS(on)eff production tested
- Transient over-voltage capability and E-mode gate driver operation without zener protection
- Very low QRR
- Reduced crossover loss
- 2kV HBM ESD rating
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly used gate drivers
技术规格
漏源电压, Vds
700V
漏源接通状态电阻
0.312ohm
晶体管封装类型
QFN
针脚数
8引脚
合规
-
电流, Id 连续
8A
栅极电荷(典型值)
5.4nC
晶体管安装
表面安装
产品范围
SuperGaN Series
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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产品合规证书
重量（千克）：.000001