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数量 | 价钱 (含税) |
---|---|
1+ | CNY9.440 (CNY10.6672) |
10+ | CNY9.400 (CNY10.622) |
50+ | CNY9.360 (CNY10.5768) |
100+ | CNY9.310 (CNY10.5203) |
250+ | CNY9.270 (CNY10.4751) |
500+ | CNY9.220 (CNY10.4186) |
1000+ | CNY9.180 (CNY10.3734) |
2500+ | CNY9.130 (CNY10.3169) |
产品信息
产品概述
The L6387ED is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT device. The high-side (floating) section is enabled to work with voltage rail up to 600V. Both device outputs can independently sink and source 650 and 400mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The L6387E features the UVLO protection on the VCC supply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.
- CMOS/TTL Schmitt-trigger inputs with hysteresis and pull-down
- Internal bootstrap diode structure
- Outputs in phase with inputs
- Interlocking function
- dV/dt immunity of ±50V/ns in full temperature range
- 50/30ns Rise/fall with 1nF load switching time
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
高压侧和低压侧
8引脚
表面安装
400mA
5.5V
-45°C
110ns
-
No SVHC (21-Jan-2025)
-
IGBT, MOSFET
SOIC
反相
650mA
17V
125°C
105ns
-
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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