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STW12N150K5
功率场效应管, MOSFET, N通道, 1.5 kV, 7 A, 1.6 ohm, TO-247, 通孔
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5,984 有货
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5984 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY67.390 (CNY76.1507) |
| 5+ | CNY61.250 (CNY69.2125) |
| 10+ | CNY55.100 (CNY62.263) |
| 50+ | CNY48.960 (CNY55.3248) |
| 100+ | CNY42.810 (CNY48.3753) |
| 250+ | CNY36.660 (CNY41.4258) |
包装规格：每个
最低: 1
多件: 1
CNY67.39 (CNY76.15 含税)
品項附註
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产品概述
STW12N150K5 is a N-channel MDmesh™ K5 power MOSFET. It is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Suitable for switching applications.
- Industry’s lowest RDS(on) area, industry’s best figure of merit (FoM)
- Ultra low gate charge, 100% avalanche tested, Zener-protected
- 1500V min drain-source breakdown voltage (VGS = 0V, ID = 1mA, TCASE = 25°C)
- 1µA max zero gate voltage drain current (VGS = 0V, VDS = 1500V, TCASE = 25°C)
- 4V typ gate threshold voltage (VDS = VGS, ID = 100µA, TCASE = 25°C)
- 1.6ohm typ static drain-source on resistance (VGS = 10V, ID = 3.5A, TCASE = 25°C)
- 1360pF typ input capacitance (VGS = 0V, VDS = 10 V, f = 1MHz, TCASE = 25°C)
- 80pF typ output capacitance (VGS = 0V, VDS = 10 V, f = 1MHz, TCASE = 25°C)
- 47nC typ total gate charge (VDD = 1200V, ID = 7A, VGS = 10V, TCASE = 25°C)
- TO-247 package, operating junction temperature range from -55 to 150°C
技术规格
通道类型
N通道
电流, Id 连续
7A
晶体管封装类型
TO-247
Rds(on)测试电压
10V
功率耗散
250W
工作温度最高值
150°C
合规
-
漏源电压, Vds
1.5kV
漏源接通状态电阻
1.6ohm
晶体管安装
通孔
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
MDmesh K5
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.00443