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数量 | 价钱 (含税) |
---|---|
1+ | CNY16.980 (CNY19.1874) |
10+ | CNY10.510 (CNY11.8763) |
50+ | CNY10.400 (CNY11.752) |
100+ | CNY10.290 (CNY11.6277) |
250+ | CNY9.780 (CNY11.0514) |
500+ | CNY9.680 (CNY10.9384) |
1000+ | CNY9.570 (CNY10.8141) |
2500+ | CNY9.460 (CNY10.6898) |
产品信息
产品概述
The TD350E is an advanced Gate Driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver. The device also includes IGBT de-saturation protection and a FAULT status output and is compatible with both pulse transformer and optocoupler signals.
- Active Miller clamp feature
- Two-level turn-OFF with adjustable level and delay
- De-saturation detection
- Fault status output
- Negative gate drive capability
- Separate sink and source outputs for easy gate driving
- UVLO protection
- 2kV ESD protection (HBM)
警告
ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
1放大器
高压侧
14引脚
表面安装
1.5A
-
-40°C
500ns
-
MSL 3 - 168小时
-
IGBT, MOSFET
SOIC
非反向
2.3A
26V
125°C
450ns
-
No SVHC (21-Jan-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书