LF356H/NOPB

The LF356H/NOPB is a first monolithic JFET input Operational Amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The LF356 amplifier is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

• Replace expensive hybrid and module FET op-amps
• Rugged JFETs allow blow-out free handling compared with MOSFET input devices
• Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
• New output stage allows use of large capacitive loads (5000pF) without stability problems
• Internal compensation and large differential input voltage capability
• Military rated
• Green product and no Sb/Br

警告

该设备静电防护措施有限, 存放时引线应短接在一起, 或将设备放置在导电泡漠中, 以防止静电对MOS门造成损坏.

注释

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.