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数量 | 价钱 (含税) |
---|---|
1+ | CNY15.790 (CNY17.8427) |
10+ | CNY10.740 (CNY12.1362) |
50+ | CNY10.140 (CNY11.4582) |
100+ | CNY9.550 (CNY10.7915) |
250+ | CNY9.040 (CNY10.2152) |
500+ | CNY8.750 (CNY9.8875) |
1000+ | CNY8.630 (CNY9.7519) |
2500+ | CNY8.520 (CNY9.6276) |
产品信息
产品概述
The LM5107SD/NOPB is a half-bridge high-voltage Gate Driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. An integrated on chip high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails.
- Drives both a high-side and low-side N-channel MOSFET
- Independent TTL compatible inputs
- Integrated bootstrap diode
- Supply rail under-voltage lockout protection
- Low power consumption
- Pin-compatible with ISL6700
- Drives 1000pF load with 15ns rise and fall time
- 118VDC Bootstrap supply voltage
- 27ns Typical fast propagation time
- 2ns Typical excellent propagation delay matching
- Green product and no Sb/Br
技术规格
2放大器
半桥
8引脚
表面安装
1.3A
8V
-40°C
29ns
-
MSL 1 -无限制
-
MOSFET
WSON
非反向
1.4A
14V
125°C
27ns
-
No SVHC (27-Jun-2018)
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书