TBD62781AFWG(Z,EHZ

TBD62781AFWG(Z,EHZ is a TBD62781A series BiCD silicon monolithic integrated circuit. A pull-down resistor is built in the output part.

• 8-ch source type DMOS transistor array
• High output voltage is 50V (max, Ta = 25°C), large output current is -500mA (max,per 1 ch, Ta=25°C)
• Input voltage range from 2.0 to 25V (output on, IOUT = -100mA or more, VDS = 2.0V, Ta = -40 to 85°C)
• Output leakage current is 1.0μA (max, VCC = 50V, VIN = 0V, Ta = 85°C)
• Current consumption is 1.5mA (max, output OPEN, VIN = 2.0V, VCC = 50V)
• Turn on delay is 0.4μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
• Turn off delay is 2.0μs (typ, VOUT = 50V, RL = 125ohm, CL = 15pF)
• P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C

注释

Please be careful about thermal conditions during use.