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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY24.970 (CNY28.2161) |
| 10+ | CNY11.720 (CNY13.2436) |
| 100+ | CNY11.500 (CNY12.995) |
| 500+ | CNY10.030 (CNY11.3339) |
| 1000+ | CNY9.960 (CNY11.2548) |
| 5000+ | CNY9.770 (CNY11.0401) |
产品概述
The IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications.
- Repetitive avalanche rated
- Reduced gate drive requirement
- 30V Enhanced VGS Rating
- Reduced CISS, COSS, CRSS
- Extremely high frequency operation
技术规格
N通道
10A
TO-220AB
10V
125W
150°C
-
Lead (21-Jan-2025)
400V
0.55ohm
通孔
4V
3引脚
-
-
IRF740LCPBF 的替代之选
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Israel
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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