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NDC7001C
Dual MOSFET, Complementary N and P Channel, 50 V, 50 V, 340 mA, 340 mA, 1 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.160 (CNY2.4408) |
| 500+ | CNY1.650 (CNY1.8645) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY216.00 (CNY244.08 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDC7001C
Order Code9844872RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds50V
Drain Source Voltage Vds N Channel50V
Drain Source Voltage Vds P Channel50V
Continuous Drain Current Id340mA
On Resistance Rds(on)1ohm
Continuous Drain Current Id N Channel340mA
Continuous Drain Current Id P Channel340mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Rds(on) Test Voltage10V
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max2.1V
No. of Pins6Pins
Power Dissipation Pd700mW
Power Dissipation N Channel700mW
Power Dissipation P Channel700mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NDC7001C is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage, low current, switching and power supply applications.
- High saturation current
- High density cell design for low RDS (ON)
- Design using copper lead-frame for superior thermal and electrical capabilities
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
50V
Drain Source Voltage Vds P Channel
50V
On Resistance Rds(on)
1ohm
Continuous Drain Current Id P Channel
340mA
Drain Source On State Resistance N Channel
1ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.1V
Power Dissipation Pd
700mW
Power Dissipation P Channel
700mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
50V
Continuous Drain Current Id
340mA
Continuous Drain Current Id N Channel
340mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1ohm
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
700mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for NDC7001C
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00004