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SISF04DN-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 108 A, 108 A, 0.003 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISF04DN-T1-GE3
Order Code3350743RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
350 In Stock
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350 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY5.820 (CNY6.5766) |
| 500+ | CNY4.610 (CNY5.2093) |
| 1000+ | CNY4.460 (CNY5.0398) |
| 5000+ | CNY4.300 (CNY4.859) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY582.00 (CNY657.66 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISF04DN-T1-GE3
Order Code3350743RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id108A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.003ohm
Continuous Drain Current Id N Channel108A
Continuous Drain Current Id P Channel108A
Drain Source On State Resistance N Channel0.003ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.003ohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK 1212-SCD
Gate Source Threshold Voltage Max2.3V
Power Dissipation Pd69.4W
No. of Pins8Pins
Power Dissipation N Channel69.4W
Power Dissipation P Channel69.4W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
108A
On Resistance Rds(on)
0.003ohm
Continuous Drain Current Id P Channel
108A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.3V
No. of Pins
8Pins
Power Dissipation P Channel
69.4W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
108A
Drain Source On State Resistance N Channel
0.003ohm
Drain Source On State Resistance P Channel
0.003ohm
Transistor Case Style
PowerPAK 1212-SCD
Power Dissipation Pd
69.4W
Power Dissipation N Channel
69.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001