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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY12.340 (CNY13.9442) |
| 10+ | CNY8.690 (CNY9.8197) |
| 50+ | CNY8.580 (CNY9.6954) |
| 100+ | CNY8.460 (CNY9.5598) |
| 250+ | CNY8.390 (CNY9.4807) |
| 500+ | CNY8.300 (CNY9.379) |
| 1000+ | CNY8.250 (CNY9.3225) |
| 2500+ | CNY8.190 (CNY9.2547) |
产品信息
产品概述
2EDB7259YXUMA1 is an EiceDRIVER™ dual-channel isolated gate-driver designed to drive Si and SiC MOSFETs and GaN HEMTs power switches. It is suited for use in applications with higher bus voltage or higher pollution degree and, in general, can ease PCB routing. It offers optional shoot-through protection (STP) and dead-time control (DTC) functionality. This allows the operation as a dual-channel low-side, dual-channel high-side, or half-bridge gate driver with a configurable dead-time. With excellent CMTI, low part-to-part skew, and fast signal propagation, the products are best suited for use in fast-switching power conversion systems. Potential applications include server, telecom SMPS, EV off-board chargers, low-voltage drives and power tools, solar micro inverter, solar optimizer, industrial power supply (SMPS, residential UPS). Isolation and safety certificates include UL1577 with VISO = 3000VRMS (certification n.E311313), GB 4943.1-2022 (certification n. CQC23001416206).
- 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches
- Fast output clamping for VDDA/B < UVLO
- Fast UVLO recovery time (<2μs)
- Fully qualified for industrial applications
- IVDDI quiescent current is 1.67mA typ no switching, TJ = 25°C
- Input supply voltage at pin VDDI is 17V max at min. defined by UVLOVDDI
- Rise time is 7.5ns typ at CLOAD = 1.8nF
- Fall time is 6ns typ at CLOAD = 1.8nF
- DSO14-150mil package
- Ambient temperature range from -40 to 125°C
技术规格
2放大器
高压侧,低压侧,半桥
14引脚
表面安装
5A
3V
-40°C
38ns
-
No SVHC (25-Jun-2025)
隔离式
GaN HEMT, Si MOSFET, SiC MOSFET
SOIC
逻辑器件
9A
17V
125°C
36ns
-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书