2EDR8259HXUMA1

2EDR8259HXUMA1 is an EiceDRIVER™ dual-channel isolated gate driver IC designed to drive Si and SiC MOSFETs and GaN HEMTs power switches. It is suited for use in applications with higher bus voltage or higher pollution degree and, in general, can ease PCB routing. It offers optional shoot-through protection (STP) and dead-time control (DTC) functionality. This allows the operation as a dual-channel low-side, dual-channel high-side, or half-bridge gate driver with a configurable dead time. It is certified by UL1577 with VISO = 5700VRMS (certification n. E311313), VDE0884-11 with VIOTM = 8000 Vpk, VIORM = 1767 Vpk, VIOSM = 6875 Vpk (certification n. 40052310), IEC 60747-17 (certification n. 40055138), IEC62368-1 (certification n. 40052310, appendix 500Z1). It is used in applications such as servers, telecom SMPS, EV off-board chargers, low-voltage drives and power tools, solar micro inverters, solar optimizers, and industrial power supply (SMPS, residential UPS).

• 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches
• Fast output clamping for VDDA/B <lt/> UVLO
• IVDDI quiescent current is 1.67mA typical at (VDDI = 3.3V, VDDA/B =12V)
• High-level (sourcing) output resistance is 0.95 ohm typical at (ISRC = 50mA)
• Peak sourcing output current is 5A typical at (CLOAD = 22nF)
• INx to OUTx turn-on propagation delay is 38ns typical
• Pulse width distortion is 2ns typical
• Input pull-down resistor is 150Kohm typical
• Junction temperature range from -40°C to 150°C, DSO16 package