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IPL60R125C7AUMA1
功率场效应管, MOSFET, N通道, 600 V, 17 A, 0.125 ohm, VSON, 表面安装
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产品信息
制造商INFINEON
制造商产品编号IPL60R125C7AUMA1
库存编号2983364
产品范围CoolMOS C7
也称为IPL60R125C7, SP001385066
技术数据表
通道类型N通道
漏源电压, Vds600V
电流, Id 连续17A
漏源接通状态电阻0.125ohm
晶体管封装类型VSON
晶体管安装表面安装
Rds(on)测试电压10V
阈值栅源电压最大值4V
功率耗散103W
针脚数4引脚
工作温度最高值150°C
产品范围CoolMOS C7
合规-
MSLMSL 1 -无限制
SVHC(高度关注物质)No SVHC (21-Jan-2025)
产品概述
IPL60R125C7AUMA1 is a 600V CoolMOS™ C7 power transistor. It is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. It combines the experience of the leading SJ MOSFET supplier with high class innovation. Potential applications includes PFC stages and PWM stages (TTF,LLC) for high power/performance SMPS example computing, server, telecom, UPS and solar.
- Suitable for hard and soft switching (PFC and high performance LLC)
- Increased MOSFET dv/dt ruggedness to 120V/ns
- Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)
- 4pin kelvin source concept
- Increased economies of scale by use in PFC and PWM topologies in the application
- Higher dv/dt limit enables faster switching leading to higher efficiency
- Enabling higher system efficiency by lower switching glosses
- Optimized PCB assembly and layout solutions
- Suitable for applications such as server, telecom and solar
- PG-VSON-4 package, operating junction temperature range from -40 to 150°C
技术规格
通道类型
N通道
电流, Id 连续
17A
晶体管封装类型
VSON
Rds(on)测试电压
10V
功率耗散
103W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
漏源电压, Vds
600V
漏源接通状态电阻
0.125ohm
晶体管安装
表面安装
阈值栅源电压最大值
4V
针脚数
4引脚
产品范围
CoolMOS C7
MSL
MSL 1 -无限制
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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产品合规证书
重量（千克）：.001