需要更多?
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY41.130 (CNY46.4769) |
| 10+ | CNY31.450 (CNY35.5385) |
| 25+ | CNY27.580 (CNY31.1654) |
| 50+ | CNY27.010 (CNY30.5213) |
| 100+ | CNY26.430 (CNY29.8659) |
| 250+ | CNY25.550 (CNY28.8715) |
| 500+ | CNY24.660 (CNY27.8658) |
产品信息
产品概述
IXDI614YI is a 14A low-side ultrafast MOSFET high-speed gate driver. It is especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each output can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns. Internal circuitry eliminates cross-conduction and current "shoot-through" making the driver virtually immune to latch-up. Low propagation delay with fast rise and fall times make the ideal for high-frequency and high-power applications. Application includes efficient power MOSFET and IGBT switching, switch mode power supplies, motor controls, DC to DC converters, class-D switching amplifiers, pulse transformer driver.
- 5-pin TO-263 package type
- Wide operating voltage range from 4.5V to 35V
- Operating temperature range from -40°C to +125°C
- Logic input withstands negative swing of up to 5V
- Low propagation delay time, low 10µA supply current
- Low output impedance
- Configured as an inverting driver
技术规格
1放大器
低压侧
5引脚
表面安装
14A
4.5V
-40°C
50ns
-
-
IGBT, MOSFET
TO-263 (D2PAK)
反相
14A
35V
125°C
50ns
-
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书