CSD882

The CSD882 is an NPN silicon transistor designed for high-current and medium-voltage applications. With a maximum collector-emitter voltage rating of 30V and a collector current rating of 3A, this transistor is suitable for use in switching and amplification circuits where robust performance and efficiency are required. It is housed in a compact TO-126-3 package, which makes it ideal for space-constrained applications. The CSD882 transistor is a versatile and reliable NPN component, well-suited for high-current and medium-voltage applications. Its high current handling, medium voltage rating, and compact TO-126-3 package make it an excellent choice for various electronic circuits and systems.

• Collector-Emitter Voltage (Vceo): 30V
• Collector-Base Voltage (Vcbo): 30V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 3A
• Base Current (Ib): Varies with application
• Power Dissipation (Pd): Typically up to 2W, contingent on heat management and mounting conditions
• DC Current Gain (hFE): Typically between 50 and 200 at Ic = 1A, Vce = 10V (values can vary based on specific conditions)
• Package Type: TO-126-3
• Pin Configuration: 3 Pins (Collector, Base, Emitter)
• Mounting Style: Through-Hole
• Package Dimensions: Compact and space-efficient, suitable for various circuit designs
• Junction Temperature (Tj): -55°C to +150°C
• Thermal Resistance, Junction to Ambient (RθJA): Approximately 100°C/W (varies with heat sinking and mounting conditions)