FDMD85100

FDMD85100 is a dual N-channel PowerTrench® MOSFET. This device includes two N-channel MOSFETs in a dual power (5mm x 6mm) packages. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Typical applications include synchronous buck, primary switch of half/ full bridge converter for telecom, motor bridge, primary switch of half/full bridge converter for BLDC motor, MV POL, 48L synchronous buck switch and half/full bridge secondary synchronous rectification.

• Max rDS(on) = 9.9mohm at VGS=10V, Id=10.4A at Q1: N-channel
• Max rDS(on) = 16.4mohm at VGS=6V, Id = 8A at Q1: N-channel
• Max rDS(on) = 9.9mohm at VGS=10V, Id = 10.4A at Q2: N-channel
• Max rDS(on) = 16.4mohm at VGS = 6V, Id = 8A at Q2: N-channel
• Ideal for flexible layout in primary side of bridge topology
• Kelvin high side MOSFET drive pin out capability