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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY38.610 (CNY43.6293) |
| 10+ | CNY25.210 (CNY28.4873) |
| 25+ | CNY21.710 (CNY24.5323) |
| 50+ | CNY19.740 (CNY22.3062) |
| 100+ | CNY17.760 (CNY20.0688) |
| 250+ | CNY15.770 (CNY17.8201) |
| 500+ | CNY15.630 (CNY17.6619) |
| 1000+ | CNY14.780 (CNY16.7014) |
产品信息
产品概述
NCP51560 is a isolated dual−channel gate driver with 4.5A/9A source and sink peak current respectively. This is designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. This offers short and matched propagation delays. Two independent and 5KVrms internal galvanic isolation from input to each output and internal functional isolation between the two output driver allows a working voltage of up to 1500VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time. Typical applications are motor drives, isolated converters in DC−DC and AC−DC power supply, server, telecom and industrial infrastructures.
- Common mode transient immunity CMTI <gt/> 200V/ns
- Propagation delay (typ) 38ns with 5ns max delay matching per channel, 5ns max pulse width distortion
- User programmable input logic, DISABLE mode
- User programmable dead−time
- 5KVrms isolation for 1 minute (per UL1577 requirements)
- 8000 VPK reinforced isolation voltage (per VDE0884−11 requirements)
- CQC certification per GB4943.1−2011
- SGS FIMO certification per IEC 62386−1
- SOIC−16 WB package
技术规格
2放大器
高压侧,低压侧,半桥
16引脚
表面安装
4.5A
3V
-40°C
38ns
-
No SVHC (25-Jun-2025)
隔离式
MOSFET, SiC MOSFET
WSOIC
-
9A
5V
125°C
38ns
-
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书