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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY203.180 (CNY229.5934) |
包装规格:每个
最低: 1
多件: 1
CNY203.18 (CNY229.59 含税)
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产品信息
制造商ROHM
制造商产品编号BM3G107MUV-EVK-003
库存编号4721199
技术数据表
硅芯制造商Rohm Semiconductor
套件应用类型电源管理
应用系统子类型GaN HEMT功率阶段
套件内容评估板 BM3G107MUV-LB
产品范围-
SVHC(高度关注物质)No SVHC (25-Jun-2025)
产品概述
BM3G107MUV-EVK-003 is a BM3G107MUV 650V GaN HEMT power stage evaluation board. This evaluation board consists of the BM3G107MUV (GaN FET (650V 70mohm), integrated driver and protection circuit) and a board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
- BM3G107MUV: Nano Cap™ integrated output selectable 5V LDO
- Long time support product for industrial applications
- Wide operating range for VDD pin voltage and wide operating range for IN pin voltage
- Low propagation delay
- High dv/dt immunity
- Adjustable gate drive strength
- Power good signal output
- VDD UVLO protection
- Thermal shutdown protection
技术规格
硅芯制造商
Rohm Semiconductor
套件应用类型
电源管理
套件内容
评估板 BM3G107MUV-LB
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
硅芯号
BM3G107MUV-LB
应用系统子类型
GaN HEMT功率阶段
产品范围
-
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Japan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Japan
进行最后一道重要生产流程所在的地区
税则号:90308900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下载产品合规证书
产品合规证书
重量(千克):.000001