MT53E512M64D2NW-046 WT:B

MT53E512M64D2NW-046 WT:B is a mobile LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8 banks.

• 16n prefetch DDR architecture, single-ended CK and DQS support
• 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, on-chip temperature sensor to control self-refresh rate
• Bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL)
• Programmable and on-the-fly burst lengths (BL = 16, 32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• 4GB (32Gb) total density, 4266Mb/s data rate per pin, 512 Meg x 64 configuration
• 432-ball VFBGA package
• Operating Temperature range from -25°C to +85°C