您已在下面突出显示的字段中输入包含无效字符的值。 请仅使用有效字符修改您的选择。
产品可能与您的搜索条件并不完全匹配
您买过此产品。
在订单历史记录中查看
TEXAS INSTRUMENTS LM5111-2M/NOPB
双MOSFET驱动器芯片, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8
- 制造商产品编号:
- LM5111-2M/NOPB
- 库存编号
- 3005780
-
- ECAD / MCAD
-
产品概述
The LM5111-2M/NOPB is a dual compound Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The driver can be operated in parallel with inputs and outputs connected to double the drive current capability.
- Independently drives two N-channel MOSFETs
- Compound CMOS and bipolar outputs reduce output current variation
- Two channels can be connected in parallel to double the drive current
- Independent inputs (TTL compatible)
- Fast rise and fall time (14/12ns rise/fall with 2nF load)
- Available in dual non-inverting, dual inverting and combination configurations
- Supply rail under-voltage lockout protection (UVLO)
- Pin-compatible with industry standard gate drivers
- Green product and no Sb/Br
应用
电源管理, 电机驱动与控制
产品信息
技术文档 (0)
可延期交货
由于市场条件的影响，交货时间仅供一般指导，可能会在短时间内发生变化
- 1+
| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|---|---|
| 1+ | CNY20.23 CNY22.8599 | ( ) |
| 数量 | 价钱 (不含税) (含税) | 您所支付金额 (不含税) |
|---|
定价不可用。 请联系客户服务。
筛选器工具