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数量 | 价钱 (含税) |
---|---|
1+ | CNY31.510 (CNY35.6063) |
10+ | CNY29.380 (CNY33.1994) |
25+ | CNY29.350 (CNY33.1655) |
50+ | CNY29.310 (CNY33.1203) |
100+ | CNY29.280 (CNY33.0864) |
250+ | CNY29.240 (CNY33.0412) |
500+ | CNY29.200 (CNY32.996) |
产品信息
产品概述
AS7C34098A-12TIN is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 262,144 words × 16bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. A read cycle is accomplished by asserting output enable (active-low OE) and chip enable (active-low CE), with write enable (active-low WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The device provides multiple centre power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. Active-low LB controls the lower bits, I/O1–I/O8, and active-low UB controls the higher bits, I/O9–I/O16.
- Pin compatible with AS7C34098
- Centre power and ground pins, high speed
- Low power consumption, 650mW/max at 10ns active, 28.8mW/max CMOS standby
- Individual byte read/write controls
- Easy memory expansion with active-low CE, active-low OE inputs
- TTL- and CMOS-compatible, three-state I/O
- ESD protection ≥ 2000volts
- Latch-up current ≥ 200mA
- 12ns access time, TSOP 2 package
- Industrial temperature range from -40°C to 85°C
技术规格
异步
256K x 16位
44引脚
3.6V
-
-40°C
-
No SVHC (27-Jun-2024)
4Mbit
TSOP-II
3V
3.3V
表面安装
85°C
-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书