HMC943APM5E

HMC943APM5E is a <gt/>1.5W (34dBm) power amplifier. It is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), <gt/>1.5W power amplifier that operates between 24GHz to 34GHz. It provides 23dB of gain, 34dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5V supply. The high output third-order intercept (IP3) of 39dBm makes the HMC943APM5E ideal for microwave radio applications. The amplifier input/outputs (I/Os) are internally matched to 50 ohm. Application includes point to point radios, point to multipoint radios, microwave radios, very small aperture terminals (VSATs), and satellite communications (SATCOM), military and space.

• Typical saturated output power is 34dBm (TA = 25°C, VD1 − VD8 = 5.5V)
• Typical output third order intercept is 39dBm (Output power (POUT) per tone = 22dBm)
• Typical gain is 23dB (TA = 25°C, VD1 − VD8 = 5.5V)
• Supply voltage range from 4 to 6V (TA = 25°C, VD1 − VD8 = 5.5V)
• No external matching required
• Typical output power for 1dB compression is 33dBm (TA = 25°C, VD1 − VD8 = 5.5V)
• Typical input return loss is 12dB (TA = 25°C, VD1 − VD8 = 5.5V)
• Typical saturated output power is 34dBm (TA = 25°C, VD1 − VD8 = 5.5V)
• Typical quiescent supply current is 1300mA (TA = 25°C, VD1 − VD8 = 5.5V)
• 32 lead LFCSP-CAV package, operating temperature range from -40°C to +85°C

注释

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party