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数量 | 价钱 (含税) |
---|---|
1+ | CNY73.720 (CNY83.3036) |
10+ | CNY53.590 (CNY60.5567) |
50+ | CNY46.930 (CNY53.0309) |
100+ | CNY43.410 (CNY49.0533) |
250+ | CNY42.720 (CNY48.2736) |
500+ | CNY42.300 (CNY47.799) |
1000+ | CNY42.090 (CNY47.5617) |
产品信息
产品概述
LTC4381ADKE-2#PBF is a low quiescent current eFuse with surge protection. It is an integrated solution for low quiescent current eFuse with an internal 9mohm N-channel MOSFET. Overvoltage protection is provided by clamping the gate voltage of an internal 9mohm N-channel MOSFET to limit the output voltage to a safe value during overvoltage events such as load dump in automobiles. The MOSFET safe operating area is production tested and guaranteed for the stresses during high voltage transients. Overcurrent protection is also provided. An internal multiplier generates a TMR pin current proportional to VDS and ID, so that operating time in both overcurrent and overvoltage conditions is limited in accordance with MOSFET stress. Applications include automotive 12V, 24V and 48V system, avionic/industrial surge protection, hot swap/live insertion, high side switch for battery-powered powered systems, automotive load dump protection.
- Operates through automobile cold crank
- Wide operating voltage range from 4V to 80V
- No input TVS needed, overcurrent protection
- Reverse input protection to –60V
- Adjustable turn-on threshold
- Adjustable fault timer with MOSFET stress acceleration
- VCC current, shutdown is 5µA typ at ON=OUT=SNS=0V
- TMR gate off threshold is 1.215V typical
- 32-lead (7mm × 5mm) plastic DFN package
- Temperature range from -40°C to +125°C
技术规格
1放大器
80V
32引脚
表面安装
-40°C
-
No SVHC (27-Jun-2024)
4V
DFN-EP
MOSFET
具有浪涌保护功能的低静态电流 eFuse
125°C
-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书